The position is available immediately for one year, with extension as an option based on productivity and funding. The position will report to Dr Baile Chen.
A PhD in electrical engineering, physics, or materials science. Hands-on, in-depth experience with semiconductor processing, device fabrication and device characterization is required. We are not necessarily seeking direct experience in III-V semiconductor photodiodes area. Experience in other semiconductor devices and materials (such as high speed GaN transistor, LED, laser diodes, silicon photonics, 2D materials etc.) are all relevant experiences to be leveraged in the projects. Basic working knowledge of material growth (MBE) and material characterization will be a plus. Hands-on experience of characterization high speed optoelectronics device is highly desirable.
Qualified applicants are invited to submit (all in English) a resume, research statement(describing research experience and career plan), copies of two representative publications, and two letters of reference to: firstname.lastname@example.org, cc to: Dr. Baile Chen (email: email@example.com). We provide very competitive salary and benefits for this post.
Discipline: Electrical/Electronic Eng.